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CSR149 STM6916 P5NA80F N74F173D 73ADW STB0370 100F1TR AWT6109
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  absolute maximum ratings parameter units i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v i dm pulsed drain current p d @t a = 25c power dissipation mw linear derating factor mw/c v gs gate-to-source voltage v e as single pulse avalanche energy  mj dv/dt peak diode recovery dv/dt  v/ns t j , t stg junction and storage temperature range c thermal resistance parameter typ. max. units r ja maximum junction-to-ambient  ??? 230 c/w 3.9 a 5.0 540 4.3 20 max. 1.2 0.93 7.3 -55 to + 150 www.irf.com 1 d s g 3 1 2 micro3 ? 

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       0.1 1 10 0.1 1 10 20 s pulse width t = 25c a j ds v , drain-to-source voltage (v) 3.0v vgs top 15v 10v 7.0v 5.5v 4.5v 4.0v 3.5v bottom 3.0v d i , drain-to-source current (a) 0.1 1 10 0.1 1 10 a ds v , drain-to-source voltage (v) d i , drain-to-source current (a) 20 s pulse width t = 150c j 3.0v vgs top 15v 10v 7.0v 5.5v 4.5v 4.0v 3.5v bottom 3.0v 0.0 0.5 1.0 1.5 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 j t , junction temperature (c) r , drain-to-source on resistance ds(on) (normalized) v = 10v gs a i = 0.91a d 0.1 1 10 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 t = 25c t = 150c j j gs v , gate-to-source voltage (v) d i , drain-to-source current (a) a v = 10v 20 s pulse width ds
 www.irf.com 4          !         !   "#     !$    % !  %  ! 0 20 40 60 80 100 120 140 160 1 10 100 c, capacitance (pf) ds v , drain-to-source voltage (v) a v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss 0 4 8 12 16 20 0.0 1.0 2.0 3.0 4.0 5.0 q , total gate charge (nc) g v , gate-to-source voltage (v) gs a for test circuit see figure 9 i = 0.91a v = 24v v = 15v d ds ds 0.1 1 10 0.4 0.6 0.8 1.0 1.2 1.4 t = 25c t = 150c j j v = 0v gs v , source-to-drain voltage (v) i , reverse drain current (a) sd sd a 0.1 1 10 100 1 10 100 v , drain-to-source voltage (v) ds i , drain current (a) operation in this area limited by r d ds(on) t = 25c t = 150c single pulse 1ms 10ms a a j 100 s 10 s
 www.irf.com 5  "# &  '   (  )* $+  v ds 90% 10% v gs t d(on) t r t d(off) t f    !         !  ,'      
 1     0.1 % +      +  &f&#& + -  - % ! ,'  d.u.t. v ds i d i g 3ma v gs .3 f 50k .2 f 12v current regulator same type as d.u.t. current sampling resistors + - q g q gs q gd v g charge ./  % !     0.1 1 10 100 1000 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
 www.irf.com 6 fig 13. 0 1   '  '2     for n-channel hexfet   power mosfets       ?  ! "   ?   ? ! #"    $ % p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period 3    ( 3 344 / 3 + - + + + - - -    +    ? &'  (  ? & % ) *+*$* ? "   (  ,, ? *+*$*-&+$    fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v v gs 25 50 75 100 125 150 starting t j , junction temperature (c) 0 2 4 6 8 10 12 14 16 18 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 0.57a 0.75a bottom 0.90a
 www.irf.com 7 micro3 / sot-23 package marking a yw lc part number y = year w = week lot code halogen free indicator part number code reference: a = irlml2402 b =irlml2803 c = irlml2402 d = irlml5103 e = irlml6402 f = irlml6401 g = irlml2502 h = irlml5203 note: a line above the work week (as shown here) indicates lead-free micro3 (sot-23 / to-236ab) part marking information note: for the most current drawing please refer to ir website at http://www.irf.com/package a 2001 a 27 w = (1-26) if preceded by last digit of calendar year w = (27-52) if preceded by a letter y 8 2008 3 2003 1 2001 ye ar 2002 2 5 2005 2004 4 2007 2006 7 6 2010 0 2009 9 ye ar y c 03 wor k we e k 01 02 a w b 04 d 24 26 25 x z y wor k we e k w k h g f e d c b 2006 2003 2002 2005 2004 2008 2007 2010 2009 j y 51 29 28 30 c b d 50 x 52 z 0.972 1.900 recommended footprint 0.802 0.950 2.742   !"# "$"%&'() 4

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 2 e e1 e d a b 0.15 [0.006] e1 1 2 3 m cba 5 6 6 5 3x l c b a1 3x a a2 a b c m 0.20 [0.008] 0.10 [0.004] c c l2 h 4 l1 7 0.89 1.12 symbol max min a1 b 0.01 0.10 c 0.30 0.50 d 0.08 0.20 e 2.80 3.04 e1 2.10 2.64 e 1.20 1.40 a 0.95 bsc l 0.40 0.60 08 millimeters a2 0.88 1.02 e1 1.90 bsc ref 0.54 l1 bsc 0.25 l2  bsc  ref  
 
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dimensions notes: 1. dimensioning & tolerancing per ansi y14.5m-1994 2. dimensions are shown in millimeters [inches]. 3. controlling dimension: millimeter. 4. datum plane h is located at the mold parting line. 5. datum a and b to be determined at datum plane h. 6. dimensions d and e1 are measured at datum plane h. dimensions does not include mold protrusions or interlead flash. mold protrusions or interlead flash shall not exceed 0.25 mm [0.010 inch] per side. 7. dimension l is the lead length for soldering to a substrate. 8. outline conforms to jedec outline to-236 ab.
 www.irf.com 8  
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 2 2.05 ( .080 ) 1.95 ( .077 ) tr feed direction 4.1 ( .161 ) 3.9 ( .154 ) 1.6 ( .062 ) 1.5 ( .060 ) 1.85 ( .072 ) 1.65 ( .065 ) 3.55 ( .139 ) 3.45 ( .136 ) 1.1 ( .043 ) 0.9 ( .036 ) 4.1 ( .161 ) 3.9 ( .154 ) 0.35 ( .013 ) 0.25 ( .010 ) 8.3 ( .326 ) 7.9 ( .312 ) 1.32 ( .051 ) 1.12 ( .045 ) 9.90 ( .390 ) 8.40 ( .331 ) 178.00 ( 7.008 ) max. notes: 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. data and specifications subject to change without notice. ir world headquarters: 101n.sepulveda blvd, el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 12/2011 note: for the most current drawing please refer to ir website at http://www.irf.com/package


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